Conjugated polymers

ABSTRACT

The invention relates to novel conjugated polymers containing repeating units comprising a halogenated benzene ring, a silolobithiophene moiety, and a benzofused heteroaromatic moiety, to methods for their preparation and educts or intermediates used therein, to polymer blends, mixtures and formulations containing them, to the use of the polymers, polymer blends, mixtures and formulations as organic semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these polymers, polymer blends, mixtures or formulations.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims benefit of co-pendinginternational patent application PCT/EP2013/000356, filed Feb. 6, 2013,and claims the benefit of U.S. Provisional Application Ser. No.61/598,984, filed Feb. 15, 2012; the contents of both applications arehereby incorporated by reference

TECHNICAL FIELD

The invention relates to novel conjugated polymers containing repeatingunits comprising a halogenated benzene ring, a silolobithiophene moiety,and a benzofused heteroaromatic moiety, to methods for their preparationand educts or intermediates used therein, to polymer blends, mixturesand formulations containing them, to the use of the polymers, polymerblends, mixtures and formulations as organic semiconductors in organicelectronic (OE) devices, especially in organic photovoltaic (OPV)devices and organic photodetectors (OPD), and to OE, OPV and OPD devicescomprising these polymers, polymer blends, mixtures or formulations.

BACKGROUND

Organic semiconducting (OSC) materials are receiving growing interestmostly due to their rapid development in the recent years and thelucrative commercial prospects of organic electronics.

One particular area of importance is organic photovoltaics (OPV).Conjugated polymers have found use in OPVs as they allow devices to bemanufactured by solution-processing techniques such as spin casting, dipcoating or ink jet printing. Solution processing can be carried outcheaper and on a larger scale compared to the evaporative techniquesused to make inorganic thin film devices. Currently, polymer basedphotovoltaic devices are achieving efficiencies above 8%.

In order to obtain ideal solution-processable OSC molecules two basicfeatures are essential, firstly a rigid π-conjugated core unit to formthe backbone, and secondly a suitable functionality attached to thearomatic core unit in the OSC backbone. The former extends π-π overlaps,defines the primary energy levels of the highest occupied and lowestunoccupied molecular orbitals (HOMO and LUMO), enables both chargeinjection and transport, and facilitates optical absorption. The latterfurther fine-tunes the energy levels and enables solubility and henceprocessability of the materials as well as π-π interactions of themolecular backbones in the solid state.

A high degree of molecular planarity reduces the energetic disorder ofOSC backbones and accordingly enhances charge carrier mobilities.Linearly fusing aromatic rings is an efficient way of achieving maximumplanarity with extended π-π conjugation of OSC molecules. Accordingly,most of the known polymeric OSCs with high charge carrier mobilities aregenerally composed of fused ring aromatic systems and aresemicrystalline in their solid states. On the other hand, such fusedaromatic ring systems are often difficult to synthesize, and do alsooften show poor solubility in organic solvents, which renders theirprocessing as thin films for use in OE devices more difficult. Also, theOSC materials disclosed in prior art still leave room for furtherimprovement regarding their electronic properties.

Thus there is still a need for organic semiconducting (OSC) polymerswhich are easy to synthesize, especially by methods suitable for massproduction, show good structural organization and film-formingproperties, exhibit good electronic properties, especially a high chargecarrier mobility, a good processability, especially a high solubility inorganic solvents, and high stability in air. Especially for use in OPVcells, there is a need for OSC materials having a low bandgap, whichenable improved light harvesting by the photoactive layer and can leadto higher cell efficiencies, compared to the polymers from prior art.

It was an aim of the present invention to provide compounds for use asorganic semiconducting materials that are easy to synthesize, especiallyby methods suitable for mass production, and do especially show goodprocessability, especially for coating into thick layers, highstability, good solubility in organic solvents, high charge carriermobility, and a low bandgap. Another aim of the invention was to extendthe pool of OSC materials available to the expert. Other aims of thepresent invention are immediately evident to the expert from thefollowing detailed description.

It was found that one or more of the above aims can be achieved byproviding conjugated polymers as disclosed and claimed hereinafter.These polymers comprise repeating units that contain a benzene ringsubstituted with one or more halogen atoms flanked by silolobithiophenemoieties, and a benzofused heteroaromatic moiety flanked by thiophenerings. These novel polymers exhibit good device performance, maintaininga high fill factor with thick coating (with a thickness >150 nm), andexcellent environmental stability including thermal and photo stability.

WO 2012/030942 A1 discloses polymers comprising repeating units thatcontain a fluorinated benzene ring flanked by silolobithiophenemoieties, but does not disclose polymers as claimed hereinafter.

SUMMARY

The invention relates to conjugated polymers comprising one or moredivalent units of formula I

wherein

-   A denotes an optionally substituted, benzofused heteroaryl moiety    comprising 1-6 heteroatoms, which is selected from the following    formulae

-   Het on each occurrence identically or differently denotes an    optionally substituted monocyclic moiety comprising at least one    heteroatom in its ring,-   R¹ and R² independently of each other denote H or halogen,    preferably H or F,-   R³ to R⁶ independently of each other, and on each occurrence    identically or differently, denote H, halogen, straight-chain,    branched or cyclic alkyl with 1 to 30 C atoms, in which one or more    CH₂ groups are optionally replaced by —O—, —S—, —C(O)—, —C(S)—,    —C(O)—O—, —O—C(O)—, —NR⁰—, —SiR⁰R⁰⁰—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or    —C≡C— in such a manner that O and/or S atoms are not linked directly    to one another, and in which one or more H atoms are optionally    replaced by F, Cl, Br, I or CN, or denote aryl, heteroaryl, aryloxy    or heteroaryloxy with 4 to 20 ring atoms which is optionally    substituted, preferably by halogen or by one or more of the    aforementioned alkyl or cyclic alkyl groups,-   Y¹ and Y² are independently of each other H, F, Cl or CN,-   R⁰ and R⁰⁰ are independently of each other H or optionally    substituted C₁₋₄₀ carbyl or hydrocarbyl, and preferably denote H or    alkyl with 1 to 12 C-atoms.

The invention further relates to a formulation comprising one or morepolymers comprising a unit of formula I and one or more solvents,preferably selected from organic solvents.

The invention further relates to the use of units of formula I aselectron donor units in semiconducting polymers.

The invention further relates to conjugated polymers comprising one ormore repeating units of formula I and/or one or more groups selectedfrom aryl and heteroaryl groups that are optionally substituted, andwherein at least one repeating unit in the polymer is a unit of formulaI.

The invention further relates to monomers containing a unit of formula Iand further containing one or more reactive groups which can be reactedto form a conjugated polymer as described above and below.

The invention further relates to semiconducting polymers comprising oneor more units of formula I as electron donor units, and preferablyfurther comprising one or more units having electron acceptorproperties.

The invention further relates to the use of the polymers according tothe present invention as electron donor or p-type semiconductor.

The invention further relates to the use of the polymers according tothe present invention as electron donor component in a semiconductingmaterial, formulation, polymer blend, device or component of a device.

The invention further relates to a semiconducting material, formulation,polymer blend, device or component of a device comprising a polymeraccording to the present invention as electron donor component, andpreferably further comprising one or more compounds or polymers havingelectron acceptor properties.

The invention further relates to a mixture or polymer blend comprisingone or more polymers according to the present invention and one or moreadditional compounds which are preferably selected from compounds havingone or more of semiconducting, charge transport, hole or electrontransport, hole or electron blocking, electrically conducting,photoconducting or light emitting properties.

The invention further relates to a mixture or polymer blend as describedabove and below, which comprises one or more polymers of the presentinvention and one or more n-type organic semiconductor compounds,preferably selected from fullerenes or substituted fullerenes.

The invention further relates to a formulation comprising one or morepolymers, formulations, mixtures or polymer blends according to thepresent invention and optionally one or more solvents, preferablyselected from organic solvents.

The invention further relates to the use of a polymer, formulation,mixture or polymer blend of the present invention as charge transport,semiconducting, electrically conducting, photoconducting or lightemitting material, or in an optical, electrooptical, electronic,electroluminescent or photoluminescent device, or in a component of sucha device or in an assembly comprising such a device or component.

The invention further relates to a charge transport, semiconducting,electrically conducting, photoconducting or light emitting materialcomprising a polymer, formulation, mixture or polymer blend according tothe present invention.

The invention further relates to an optical, electrooptical, electronic,electroluminescent or photoluminescent device, or a component thereof,or an assembly comprising it, which comprises a polymer, formulation,mixture or polymer blend, or comprises a charge transport,semiconducting, electrically conducting, photoconducting or lightemitting material, according to the present invention.

The optical, electrooptical, electronic, electroluminescent andphotoluminescent devices include, without limitation, organic fieldeffect transistors (OFET), organic thin film transistors (OTFT), organiclight emitting diodes (OLED), organic light emitting transistors (OLET),organic photovoltaic devices (OPV), organic photodetectors (OPD),organic solar cells, laser diodes, Schottky diodes, photoconductors andphotodetectors.

The components of the above devices include, without limitation, chargeinjection layers, charge transport layers, interlayers, planarisinglayers, antistatic films, polymer electrolyte membranes (PEM),conducting substrates and conducting patterns.

The assemblies comprising such devices or components include, withoutlimitation, integrated circuits (IC), radio frequency identification(RFID) tags or security markings or security devices containing them,flat panel displays or backlights thereof, electrophotographic devices,electrophotographic recording devices, organic memory devices, sensordevices, biosensors and biochips.

In addition the compounds, polymers, formulations, mixtures or polymerblends of the present invention can be used as electrode materials inbatteries and in components or devices for detecting and discriminatingDNA sequences.

DETAILED DESCRIPTION

The polymers of the present invention are easy to synthesize and exhibitadvantageous properties. They show good processability for the devicemanufacture process, high solubility in organic solvents, and areespecially suitable for large scale production using solution processingmethods. At the same time, the co-polymers derived from monomers of thepresent invention and electron donor monomers show low bandgaps, highcharge carrier mobilities, high external quantum efficiencies in BHJsolar cells, good morphology when used in p/n-type blends e.g. withfullerenes, high oxidative stability, and a long lifetime in electronicdevices, and are promising materials for organic electronic OE devices,especially for OPV devices with high power conversion efficiency.

The units of formula I are especially suitable as (electron) donor unitin both n-type and p-type semiconducting compounds, polymers orcopolymers, in particular copolymers containing both donor and acceptorunits, and for the preparation of blends of p-type and n-typesemiconductors which are suitable for use in BHJ photovoltaic devices.

The polymers of the present invention in particular show good deviceperformance, maintaining a high fill factor with thick coating (with athickness >150 nm), and excellent environmental stability includingthermal and photo stability.

The synthesis of the unit of formula I, its functional derivatives,compounds, homopolymers, and co-polymers can be achieved based onmethods that are known to the skilled person and described in theliterature, as will be further illustrated herein.

As used herein, the term “polymer” will be understood to mean a moleculeof high relative molecular mass, the structure of which essentiallycomprises the multiple repetition of units derived, actually orconceptually, from molecules of low relative molecular mass (Pure Appl.Chem., 1996, 68, 2289). The term “oligomer” will be understood to mean amolecule of intermediate relative molecular mass, the structure of whichessentially comprises a small plurality of units derived, actually orconceptually, from molecules of lower relative molecular mass (PureAppl. Chem., 1996, 68, 2289). In a preferred meaning as used hereinpresent invention a polymer will be understood to mean a compoundhaving >1, i.e. at least 2 repeat units, preferably 5 repeat units, andan oligomer will be understood to mean a compound with >1 and <10,preferably <5, repeat units.

Further, as used herein, the term “polymer” will be understood to mean amolecule that encompasses a backbone (also referred to as “main chain”)of one or more distinct types of repeat units (the smallestconstitutional unit of the molecule) and is inclusive of the commonlyknown terms “oligomer”, “copolymer”, “homopolymer” and the like.Further, it will be understood that the term polymer is inclusive of, inaddition to the polymer itself, residues from initiators, catalysts andother elements attendant to the synthesis of such a polymer, where suchresidues are understood as not being covalently incorporated thereto.Further, such residues and other elements, while normally removed duringpost polymerization purification processes, are typically mixed orco-mingled with the polymer such that they generally remain with thepolymer when it is transferred between vessels or between solvents ordispersion media.

As used herein, in a formula showing a polymer or a repeat unit, likefor example a unit of formula I or a polymer comprising it, or theirsubformulae, an asterisk (*) will be understood to mean a chemicallinkage to an adjacent unit or to a terminal group in the polymerbackbone. In a ring, like for example a benzene or thiophene ring, anasterisk (*) will be understood to mean a C atom that is fused to anadjacent ring.

As used herein, the terms “repeat unit”, “repeating unit” and “monomericunit” are used interchangeably and will be understood to mean theconstitutional repeating unit (CRU), which is the smallestconstitutional unit the repetition of which constitutes a regularmacromolecule, a regular oligomer molecule, a regular block or a regularchain (Pure Appl. Chem., 1996, 68, 2289). As further used herein, theterm “unit” will be understood to mean a structural unit which can be arepeating unit on its own, or can together with other units form aconstitutional repeating unit.

As used herein, a “terminal group” will be understood to mean a groupthat terminates a polymer backbone. The expression “in terminal positionin the backbone” will be understood to mean a divalent unit or repeatunit that is linked at one side to such a terminal group and at theother side to another repeat unit. Such terminal groups include endcapgroups, or reactive groups that are attached to a monomer forming thepolymer backbone which did not participate in the polymerisationreaction, like for example a group having the meaning of R⁵ or R⁶ asdefined below.

As used herein, the term “endcap group” will be understood to mean agroup that is attached to, or replacing, a terminal group of the polymerbackbone. The endcap group can be introduced into the polymer by anendcapping process. Endcapping can be carried out for example byreacting the terminal groups of the polymer backbone with amonofunctional compound (“endcapper”) like for example an alkyl- orarylhalide, an alkyl- or arylstannane or an alkyl- or arylboronate. Theendcapper can be added for example after the polymerisation reaction.Alternatively the endcapper can be added in situ to the reaction mixturebefore or during the polymerisation reaction. In situ addition of anendcapper can also be used to terminate the polymerisation reaction andthus control the molecular weight of the forming polymer. Typical endcapgroups are for example H, phenyl and lower alkyl.

As used herein, the term “small molecule” will be understood to mean amonomeric compound which typically does not contain a reactive group bywhich it can be reacted to form a polymer, and which is designated to beused in monomeric form. In contrast thereto, the term “monomer” unlessstated otherwise will be understood to mean a monomeric compound thatcarries one or more reactive functional groups by which it can bereacted to form a polymer.

As used herein, the terms “donor” or “donating” and “acceptor” or“accepting” will be understood to mean an electron donor or electronacceptor, respectively. “Electron donor” will be understood to mean achemical entity that donates electrons to another compound or anothergroup of atoms of a compound. “Electron acceptor” will be understood tomean a chemical entity that accepts electrons transferred to it fromanother compound or another group of atoms of a compound. (see also U.S.Environmental Protection Agency, 2009, Glossary of technical terms.)

As used herein, the term “n-type” or “n-type semiconductor” will beunderstood to mean an extrinsic semiconductor in which the conductionelectron density is in excess of the mobile hole density, and the term“p-type” or “p-type semiconductor” will be understood to mean anextrinsic semiconductor in which mobile hole density is in excess of theconduction electron density (see also, J. Thewlis, Concise Dictionary ofPhysics, Pergamon Press, Oxford, 1973).

As used herein, the term “leaving group” will be understood to mean anatom or group (which may be charged or uncharged) that becomes detachedfrom an atom in what is considered to be the residual or main part ofthe molecule taking part in a specified reaction (see also Pure Appl.Chem., 1994, 66, 1134).

As used herein, the term “conjugated” will be understood to mean acompound (for example a polymer) that contains mainly C atoms withsp²-hybridisation (or optionally also sp-hybridisation), and whereinthese C atoms may also be replaced by hetero atoms. In the simplest casethis is for example a compound with alternating C—C single and double(or triple) bonds, but is also inclusive of compounds with aromaticunits like for example 1,4-phenylene. The term “mainly” in thisconnection will be understood to mean that a compound with naturally(spontaneously) occurring defects, which may lead to interruption of theconjugation, is still regarded as a conjugated compound.

As used herein, unless stated otherwise the molecular weight is given asthe number average molecular weight M_(n) or weight average molecularweight M_(w), which is determined by gel permeation chromatography (GPC)against polystyrene standards in eluent solvents such astetrahydrofuran, trichloromethane (TCM, chloroform), chlorobenzene or1,2,4-trichlorobenzene. Unless stated otherwise, 1,2,4-trichlorobenzeneis used as solvent. The degree of polymerization, also referred to astotal number of repeat units, n, will be understood to mean the numberaverage degree of polymerization given as n=M_(n)/M_(U), wherein M_(n)is the number average molecular weight and M_(U) is the molecular weightof the single repeat unit, see J. M. G. Cowie, Polymers: Chemistry &Physics of Modern Materials, Blackie, Glasgow, 1991.

As used herein, the term “carbyl group” will be understood to meandenotes any monovalent or multivalent organic radical moiety whichcomprises at least one carbon atom either without any non-carbon atoms(like for example —C≡C—), or optionally combined with at least onenon-carbon atom such as N, O, S, P, Si, Se, As, Te or Ge (for examplecarbonyl etc.). The term “hydrocarbyl group” will be understood to meana carbyl group that does additionally contain one or more H atoms andoptionally contains one or more hetero atoms like for example N, O, S,P, Si, Se, As, Te or Ge.

As used herein, the term “hetero atom” will be understood to mean anatom in an organic compound that is not a H- or C-atom, and preferablywill be understood to mean N, O, S, P, Si, Se, As, Te or Ge.

A carbyl or hydrocarbyl group comprising a chain of 3 or more C atomsmay be straight-chain, branched and/or cyclic, including spiro and/orfused rings.

Preferred carbyl and hydrocarbyl groups include alkyl, alkoxy,alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy and alkoxycarbonyloxy,each of which is optionally substituted and has 1 to 40, preferably 1 to25, very preferably 1 to 18 C atoms, furthermore optionally substitutedaryl or aryloxy having 6 to 40, preferably 6 to 25 C atoms, furthermorealkylaryloxy, arylcarbonyl, aryloxycarbonyl, arylcarbonyloxy andaryloxycarbonyloxy, each of which is optionally substituted and has 6 to40, preferably 7 to 40 C atoms, wherein all these groups do optionallycontain one or more hetero atoms, preferably selected from N, O, S, P,Si, Se, As, Te and Ge.

The carbyl or hydrocarbyl group may be a saturated or unsaturatedacyclic group, or a saturated or unsaturated cyclic group. Unsaturatedacyclic or cyclic groups are preferred, especially aryl, alkenyl andalkynyl groups (especially ethynyl). Where the C₁-C₄₀ carbyl orhydrocarbyl group is acyclic, the group may be straight-chain orbranched. The C₁-C₄₀ carbyl or hydrocarbyl group includes for example: aC₁-C₄₀ alkyl group, a C₁-C₄₀ fluoroalkyl group, a C₁-C₄₀ alkoxy oroxaalkyl group, a C₂-C₄₀ alkenyl group, a C₂-C₄₀ alkynyl group, a C₃-C₄₀allyl group, a C₄-C₄₀ alkyldienyl group, a C₄-C₄₀ polyenyl group, aC₂-C₄₀ ketone group, a C₂-C₄₀ ester group, a C₆-C₁₈ aryl group, a C₆-C₄₀alkylaryl group, a C₆-C₄₀ arylalkyl group, a C₄-C₄₀ cycloalkyl group, aC₄-C₄₀ cycloalkenyl group, and the like. Preferred among the foregoinggroups are a C₁-C₂₀ alkyl group, a C₁-C₂₀ fluoroalkyl group, a C₂-C₂₀alkenyl group, a C₂-C₂₀ alkynyl group, a C₃-C₂₀ allyl group, a C₄-C₂₀alkyldienyl group, a C₂-C₂₀ ketone group, a C₂-C₂₀ ester group, a C₆-C₁₂aryl group, and a C₄-C₂₀ polyenyl group, respectively. Also included arecombinations of groups having carbon atoms and groups having heteroatoms, like e.g. an alkynyl group, preferably ethynyl, that issubstituted with a silyl group, preferably a trialkylsilyl group.

The terms “aryl” and “heteroaryl” as used herein preferably mean amono-, bi- or tricyclic aromatic or heteroaromatic group with 4 to 30ring C atoms that may also comprise condensed rings and is optionallysubstituted with one or more groups L,

wherein L is selected from halogen, —CN, —NC, —NCO, —NCS, —OCN, —SCN,—C(═O)NR⁰R⁰⁰, —C(═O)X⁰, —C(═O)R⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰, —SO₃H,—SO₂R⁰, —OH, —NO₂, —CF₃, —SF₅, P-Sp-, optionally substituted silyl, orcarbyl or hydrocarbyl with 1 to 40 C atoms that is optionallysubstituted and optionally comprises one or more hetero atoms, and ispreferably alkyl, alkoxy, thiaalkyl, alkylcarbonyl, alkoxycarbonyl oralkoxycarbonyloxy with 1 to 20 C atoms that is optionally fluorinated,and R⁰, R⁰⁰, X⁰, P and Sp have the meanings given above and below.

Very preferred substituents L are selected from halogen, most preferablyF, or alkyl, alkoxy, oxaalkyl, thioalkyl, fluoroalkyl and fluoroalkoxywith 1 to 12 C atoms or alkenyl, alkynyl with 2 to 12 C atoms.

Especially preferred aryl and heteroaryl groups are phenyl in which, inaddition, one or more CH groups may be replaced by N, naphthalene,thiophene, selenophene, thienothiophene, dithienothiophene, fluorene andoxazole, all of which can be unsubstituted, mono- or polysubstitutedwith L as defined above. Very preferred rings are selected from pyrrole,preferably N-pyrrole, furan, pyridine, preferably 2- or 3-pyridine,pyrimidine, pyridazine, pyrazine, triazole, tetrazole, pyrazole,imidazole, isothiazole, thiazole, thiadiazole, isoxazole, oxazole,oxadiazole, thiophene, preferably 2-thiophene, selenophene, preferably2-selenophene, thieno[3,2-b]thiophene, thieno[2,3-b]thiophene,furo[3,2-b]furan, furo[2,3-b]furan, seleno[3,2-b]selenophene,seleno[2,3-b]selenophene, thieno[3,2-b]selenophene, thieno[3,2-b]furan,indole, isoindole, benzo[b]furan, benzo[b]thiophene,benzo[1,2-b;4,5-b′]dithiophene, benzo[2,1-b;3,4-b′]dithiophene, quinole,2-methylquinole, isoquinole, quinoxaline, quinazoline, benzotriazole,benzimidazole, benzothiazole, benzisothiazole, benzisoxazole,benzoxadiazole, benzoxazole, benzothiadiazole, all of which can beunsubstituted, mono- or polysubstituted with L as defined above. Furtherexamples of aryl and heteroaryl groups are those selected from thegroups shown hereinafter.

An alkyl or alkoxy radical, i.e. where the terminal CH₂ group isreplaced by —O—, can be straight-chain or branched. It is preferablystraight-chain, has 2, 3, 4, 5, 6, 7 or 8 carbon atoms and accordinglyis preferably ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl,ethoxy, propoxy, butoxy, pentoxy, hexoxy, heptoxy, or octoxy,furthermore methyl, nonyl, decyl, undecyl, dodecyl, tridecyl,tetradecyl, pentadecyl, nonoxy, decoxy, undecoxy, dodecoxy, tridecoxy ortetradecoxy, for example.

An alkenyl group, wherein one or more CH₂ groups are replaced by —CH═CH—can be straight-chain or branched. It is preferably straight-chain, has2 to 10 C atoms and accordingly is preferably vinyl, prop-1-, orprop-2-enyl, but-1-, 2- or but-3-enyl, pent-1-, 2-, 3- or pent-4-enyl,hex-1-, 2-, 3-, 4- or hex-5-enyl, hept-1-, 2-, 3-, 4-, 5- orhept-6-enyl, oct-1-, 2-, 3-, 4-, 5-, 6- or oct-7-enyl, non-1-, 2-, 3-,4-, 5-, 6-, 7- or non-8-enyl, dec-1-, 2-, 3-, 4-, 5-, 6-, 7-, 8- ordec-9-enyl.

Especially preferred alkenyl groups are C₂-C₇-1E-alkenyl,C₄-C₇-3E-alkenyl, C₅-C₇-4-alkenyl, C₆-C₇-5-alkenyl and C₇-6-alkenyl, inparticular C₂-C₇-1E-alkenyl, C₄-C₇-3E-alkenyl and C₅-C₇-4-alkenyl.Examples for particularly preferred alkenyl groups are vinyl,1E-propenyl, 1E-butenyl, 1E-pentenyl, 1E-hexenyl, 1E-heptenyl,3-butenyl, 3E-pentenyl, 3E-hexenyl, 3E-heptenyl, 4-pentenyl, 4Z-hexenyl,4E-hexenyl, 4Z-heptenyl, 5-hexenyl, 6-heptenyl and the like. Groupshaving up to 5 C atoms are generally preferred.

An oxaalkyl group, i.e. where one CH₂ group is replaced by —O—, ispreferably straight-chain 2-oxapropyl(=methoxymethyl), 2-(=ethoxymethyl)or 3-oxabutyl(=2-methoxyethyl), 2-, 3-, or 4-oxapentyl, 2-, 3-, 4-, or5-oxahexyl, 2-, 3-, 4-, 5-, or 6-oxaheptyl, 2-, 3-, 4-, 5-, 6- or7-oxaoctyl, 2-, 3-, 4-, 5-, 6-, 7- or 8-oxanonyl or 2-, 3-, 4-, 5-, 6-,7-, 8- or 9-oxadecyl, for example. Oxaalkyl, i.e. where one CH₂ group isreplaced by —O—, is preferably straight-chain2-oxapropyl(=methoxymethyl), 2-(=ethoxymethyl) or3-oxabutyl(=2-methoxyethyl), 2-, 3-, or 4-oxapentyl, 2-, 3-, 4-, or5-oxahexyl, 2-, 3-, 4-, 5-, or 6-oxaheptyl, 2-, 3-, 4-, 5-, 6- or7-oxaoctyl, 2-, 3-, 4-, 5-, 6-, 7- or 8-oxanonyl or 2-, 3-, 4-, 5-, 6-,7-, 8- or 9-oxadecyl, for example.

In an alkyl group wherein one CH₂ group is replaced by —O— and one by—C(O)—, these radicals are preferably neighboured. Accordingly theseradicals together form a carbonyloxy group —C(O)—O— or an oxycarbonylgroup —O—C(O)—. Preferably this group is straight-chain and has 2 to 6 Catoms. It is accordingly preferably acetyloxy, propionyloxy, butyryloxy,pentanoyloxy, hexanoyloxy, acetyloxymethyl, propionyloxymethyl,butyryloxymethyl, pentanoyloxymethyl, 2-acetyloxyethyl,2-propionyloxy-ethyl, 2-butyryloxyethyl, 3-acetyloxypropyl,3-propionyloxypropyl, 4-acetyloxybutyl, methoxycarbonyl, ethoxycarbonyl,propoxycarbonyl, butoxycarbonyl, pentoxycarbonyl, methoxycarbonylmethyl,ethoxycarbonyl methyl, propoxycarbonylmethyl, butoxycarbonylmethyl,2-(methoxycarbonyl)ethyl, 2-(ethoxycarbonyl)ethyl,2-(propoxy-carbonyl)ethyl, 3-(methoxycarbonyl)propyl,3-(ethoxycarbonyl)propyl, 4-(methoxycarbonyl)-butyl.

An alkyl group wherein two or more CH₂ groups are replaced by —O— and/or—C(O)O— can be straight-chain or branched. It is preferablystraight-chain and has 3 to 12 C atoms. Accordingly it is preferablybis-carboxy-methyl, 2,2-bis-carboxy-ethyl, 3,3-bis-carboxy-propyl,4,4-bis-carboxy-butyl, 5,5-bis-carboxy-pentyl, 6,6-bis-carboxy-hexyl,7,7-bis-carboxy-heptyl, 8,8-bis-carboxy-octyl, 9,9-bis-carboxy-nonyl,10,10-bis-carboxy-decyl, bis-(methoxycarbonyl)-methyl,2,2-bis-(methoxycarbonyl)-ethyl, 3,3-bis-(methoxycarbonyl)-propyl,4,4-bis-(methoxycarbonyl)-butyl, 5,5-bis-(methoxycarbonyl)-pentyl,6,6-bis-(methoxycarbonyl)-hexyl, 7,7-bis-(methoxycarbonyl)-heptyl,8,8-bis-(methoxycarbonyl)-octyl, bis-(ethoxycarbonyl)-methyl,2,2-bis-(ethoxycarbonyl)-ethyl, 3,3-bis-(ethoxycarbonyl)-propyl,4,4-bis-(ethoxycarbonyl)-butyl, 5,5-bis-(ethoxycarbonyl)-hexyl.

A thioalkyl group, i.e where one CH₂ group is replaced by —S—, ispreferably straight-chain thiomethyl (—SCH₃), 1-thioethyl (—SCH₂CH₃),1-thiopropyl(=—SCH₂CH₂CH₃), 1-(thiobutyl), 1-(thiopentyl),1-(thiohexyl), 1-(thioheptyl), 1-(thiooctyl), 1-(thiononyl),1-(thiodecyl), 1-(thioundecyl) or 1-(thiododecyl), wherein preferablythe CH₂ group adjacent to the sp² hybridised vinyl carbon atom isreplaced.

A fluoroalkyl group is preferably perfluoroalkyl wherein i is an integerfrom 1 to 15, in particular CF₃, C₂F₅, C₃F₇, C₄F₉, C₅F₁₁, C₆F₁₃, C₇F₁₅or C₈F₁₇, very preferably C₆F₁₃, or partially fluorinated alkyl, inparticular 1,1-difluoroalkyl, all of which are straight-chain orbranched.

Alkyl, alkoxy, alkenyl, oxaalkyl, thioalkyl, carbonyl and carbonyloxygroups can be achiral or chiral groups. Particularly preferred chiralgroups are 2-butyl(=1-methylpropyl), 2-methylbutyl, 2-methylpentyl,3-methylpentyl, 2-ethylhexyl, 2-propylpentyl, in particular2-methylbutyl, 2-methylbutoxy, 2-methylpentoxy, 3-methylpentoxy,2-ethyl-hexoxy, 1-methylhexoxy, 2-octyloxy, 2-oxa-3-methylbutyl,3-oxa-4-methyl-pentyl, 4-methylhexyl, 2-hexyl, 2-octyl, 2-nonyl,2-decyl, 2-dodecyl, 6-meth-oxyoctoxy, 6-methyloctoxy,6-methyloctanoyloxy, 5-methyl heptyloxy-carbonyl, 2-methylbutyryloxy,3-methylvaleroyloxy, 4-methylhexanoyloxy, 2-chloropropionyloxy,2-chloro-3-methylbutyryloxy, 2-chloro-4-methyl-valeryl-oxy,2-chloro-3-methylvaleryloxy, 2-methyl-3-oxapentyl, 2-methyl-3-oxahexyl,1-methoxypropyl-2-oxy, 1-ethoxypropyl-2-oxy, 1-propoxypropyl-2-oxy,1-butoxypropyl-2-oxy, 2-fluorooctyloxy, 2-fluorodecyloxy,1,1,1-trifluoro-2-octyloxy, 1,1,1-trifluoro-2-octyl,2-fluoromethyloctyloxy for example. Very preferred are 2-hexyl, 2-octyl,2-octyloxy, 1,1,1-trifluoro-2-hexyl, 1,1,1-trifluoro-2-octyl and1,1,1-trifluoro-2-octyloxy.

Preferred achiral branched groups are isopropyl,isobutyl(=methylpropyl), isopentyl(=3-methylbutyl), tert. butyl,isopropoxy, 2-methyl-propoxy and 3-methyl butoxy.

In a preferred embodiment, R^(3,4) are independently of each otherselected from primary, secondary or tertiary alkyl or alkoxy with 1 to30 C atoms, wherein one or more H atoms are optionally replaced by F, oraryl, aryloxy, heteroaryl or heteroaryloxy that is optionally alkylatedor alkoxylated and has 4 to 30 ring atoms. Very preferred groups of thistype are selected from the group consisting of the following formulae

wherein “ALK” denotes optionally fluorinated, preferably linear, alkylor alkoxy with 1 to 20, preferably 1 to 12 C-atoms, in case of tertiarygroups very preferably 1 to 9 C atoms, and the dashed line denotes thelink to the ring to which these groups are attached. Especiallypreferred among these groups are those wherein all ALK subgroups areidentical.

—CY¹¹═CY¹²— is preferably —CH═CH—, —CF═CF— or —CH═C(CN)—.

As used herein, “halogen” denotes F, Cl, Br or I, preferably F, Cl orBr.

A used herein, —CO—, —C(═O)— and —C(O)— will be understood to mean acarbonyl group, i.e. a group having the structure

In the units of formula I, preferably at least two of R¹ and R² denoteF.

Further preferably R¹ in formula I denotes F and R² denotes H.

Further preferably R¹ and R² in formula I denote F.

In the units of formula I, preferably one of R³ and R⁴ denotes H and theother is different from H and preferably denotes straight-chain orbranched alkyl, alkoxy or thioalkyl with 1 to 30 C atoms.

Further preferably R⁴ in formula I denotes H and R³ is different from Hand preferably denotes straight-chain or branched alkyl, alkoxy orthioalkyl with 1 to 30 C atoms.

Further preferably R³ and R⁴ in formula I denote H.

In the units of formula I and its preferred subformulae, R⁵ preferablydenotes straight-chain, branched or cyclic alkyl, alkoxy or thioalkylwith 1 to 30 C atoms which is unsubstituted or substituted by one ormore F atoms.

In the preferred formulae for group M, R⁶ preferably denotes H, F orstraight-chain or branched alkyl, alkoxy, thioalkyl, amino alkyl,carbonylalkyl, oxacarbonylalkyl or carbonyloxaalkyl with 1 to 30 C atomswhich is unsubstituted or substituted by one or more F atoms. Furtherpreferably R⁶ I is selected from the group consisting of aryl andheteroaryl, each of which is optionally fluorinated, alkylated oralkoxylated and has 4 to 30 ring atoms.

If R⁶ denotes substituted aryl or heteroaryl, it is preferablysubstituted by one or more groups L, wherein L is selected from P-Sp-,F, Cl, Br, I, —OH, —CN, —NO₂, —NCO, —NCS, —OCN, —SCN, —C(═O)NR⁰R⁰⁰,—C(═O)X⁰, —C(═O)R⁰, —NR⁰R⁰⁰, C(═O)OH, optionally substituted aryl orheteroaryl having 4 to 20 ring atoms, or straight chain, branched orcyclic alkyl with 1 to 20, preferably 1 to 12 C atoms wherein one ormore non-adjacent CH₂ groups are optionally replaced, in each caseindependently from one another, by —O—, —S—, —NR⁰—, —SiR⁰R⁰⁰—, —C(═O)—,—C(═O)O—, —CY¹═CY²— or —C≡C— in such a manner that O and/or S atoms arenot linked directly to one another and which is unsubstituted orsubstituted with one or more F or Cl atoms or OH groups, X⁰ is halogen,preferably F, Cl or Br, and Y¹, Y², R⁰ and R⁰⁰ have the meanings givenabove and below.

A in formula I is preferably selected from the following subformulae:

wherein R⁶ has one of the meanings given in formula I or one of thepreferred meanings given above, and R⁷ has one of the meanings of R⁶.

Very preferably A in formula I is selected from subformulae B1a, B2b andB3a.

Preferred units of formula I are selected from the following formulae:

wherein R³, R⁵ and R⁶ have independently of each other one of themeanings given in formula I or one of the preferred meanings givenabove.

Preferred polymers are selected from formula II

wherein

-   A is a unit of formula I or its preferred subformulae Ia to In,-   B is a unit that is different from A and is either selected from    formula I or its preferred subformulae Ia to In, or is selected from    aryl and heteroaryl groups that are optionally substituted,-   x is >0 and ≦1,-   y is ≧0 and <1,-   x+y is 1, and-   n is an integer >1.

Preferred polymers of formula II are selected from the followingsubformulae:

wherein R³, R⁵ and R⁶ have independently of each other one of themeanings given in formula I or one of the preferred meanings givenabove, 0<x<1 and 0<y<1, and preferably 0.05<x<0.95 and 0.05<y<0.95.

Further preferred polymers are selected from formula IIIR⁸-chain-R⁹  IIIwherein “chain” denotes a polymer chain of formulae II or IIa to IIr,and R⁸ and R⁹ have independently of each other one of the meanings of R⁶as defined above, or denote, independently of each other, H, F, Br, Cl,I, —CH₂Cl, —CHO, —CR^(a)═CR^(b) ₂, —SiR^(a)R^(b)R^(c),—SiR^(a)X^(a)X^(b), —SiR^(a)R^(b)X^(a), —SnR^(a)R^(b)R^(c),—BR^(a)R^(b), —B(OR^(a))(OR^(b)), —B(OH)₂, —O—SO₂—R^(a), —C≡CH,—C≡C—SiR^(a) ₃, —ZnX^(a) or an endcap group, X^(a) and X^(b) denotehalogen, R^(a), R^(b) and R^(c) have independently of each other one ofthe meanings of R⁰ given in formula I1, and two of R^(a), R^(b) andR^(c) may also form a ring together with the hetero atom to which theyare attached.

Preferred endcap groups R⁸ and R⁹ are H, C₁₋₂₀ alkyl, or optionallysubstituted C₆₋₁₂ aryl or C₂₋₁₀ heteroaryl, very preferably H or phenyl.

In the polymers represented by formula II and IIo to IIr, x denotes themole fraction of units A, y denotes the mole fraction of units B, and ndenotes the degree of polymerisation or total number of units A and B.These formulae includes block copolymers, random or statisticalcopolymers and alternating copolymers of A and B, as well ashomopolymers of A for the case when x is >0 and y is 0.

Another aspect of the invention relates to monomers of formula IV

wherein R¹, R² and R⁵ have independently of each other one of themeanings given in formula I or one of the preferred meanings givenabove, and R¹⁰ and R¹¹ are, preferably independently of each other,selected from the group consisting of H, Cl, Br, I, O-tosylate,O-triflate, O-mesylate, O-nonaflate, —SiMe₂F, —SiMeF₂, —O—SO₂Z¹,—B(OZ²)₂, —CZ³═C(Z³)₂, —C≡CH, —C≡CSi(Z¹)₃, —ZnX^(a) and —Sn(Z⁴)₃,wherein X^(a) is halogen, preferably Cl, Br or I, Z¹⁻⁴ are selected fromthe group consisting of alkyl and aryl, preferably alkyl with 1 to 10 Catoms, each being optionally substituted, and two groups Z² may alsotogether form a cyclic group.

Further preferred are repeating units, monomers and polymers of formulaeI-IV and their subformulae selected from the following list of preferredembodiments:

-   -   n is at least 5, preferably at least 10, very preferably at        least 50, and up to 2,000, preferably up to 500.    -   M_(w) is at least 5,000, preferably at least 8,000, very        preferably at least 10,000, and preferably up to 300,000, very        preferably up to 100,000,    -   R⁰ and R⁰⁰ are selected from H or C₁-C₁₀-alkyl,    -   R⁸ and R⁹ are selected from H, halogen, —CH₂Cl, —CHO,        —CH═CH₂—SiR^(a)R^(b)R^(c), —SnR^(a)R^(b)R^(c), —BR^(a)R^(b),        —B(OR^(a))(OR^(b))—B(OH)₂, C₁-C₂₀-alkyl, C₁-C₂₀-alkoxy,        C₂-C₂₀-alkenyl, C₁-C₂₀-fluoroalkyl and optionally substituted        aryl or heteroaryl, preferably phenyl,    -   R¹⁰ and R¹¹ are, preferably independently of each other,        selected from the group consisting of H, Cl, Br, I, O-tosylate,        O-triflate, O-mesylate, O-nonaflate, —SiMe₂F, —SiMeF₂, —O—SO₂Z¹,        —B(OZ²)₂, —CZ³═C(Z⁴)₂, —C≡CH, —C≡CSi(Z¹)₃, —ZnX^(a) and        —Sn(Z⁴)₃, wherein X^(a) is halogen, Z¹⁻⁴ are selected from the        group consisting of alkyl and aryl, each being optionally        substituted, and two groups Z² may also form a cyclic group.

The compounds of the present invention can be synthesized according toor in analogy to methods that are known to the skilled person and aredescribed in the literature. Other methods of preparation can be takenfrom the examples. For example, the polymers can be suitably prepared byaryl-aryl coupling reactions, such as Yamamoto coupling, Suzukicoupling, Stille coupling, Sonogashira coupling, Heck coupling, Buchwaldcoupling or C—H activation coupling. Suzuki coupling, Stille couplingand Yamamoto coupling are especially preferred. The monomers which arepolymerised to form the repeat units of the polymers can be preparedaccording to methods which are known to the person skilled in the art.

Preferably the polymers are prepared from monomers of formula IV, whichare for example coupled with monomers of formula V in anaryl-aryl-coupling reaction:

wherein R³, R⁴ and A have independently of each other one of themeanings given in formula I or one of the preferred meanings givenabove, and R¹⁰ and R¹¹ have one of meanings of formula IV or one of thepreferred meanings given above.

Another aspect of the invention is a process for preparing a polymer bycoupling one or more identical or different monomeric units of formulaIV with one or more identical or different units of formula V and/orwith one or more aryl co-monomers in a polymerisation reaction,preferably in an aryl-aryl coupling reaction. Suitable and preferredaryl co-monomers for this process are selected from formula VIR¹⁰—(Ar)_(a)—R¹¹  VIwherein Ar is on each occurrence identically or differently an aryl orheteroaryl group, a is 1, 2, 3, 4, 5 or 6, and R¹⁰ and R¹¹ have one ofmeanings of formula IV or one of the preferred meanings given above.

Very preferred is a process for preparing a polymer by coupling one ormore monomers of formula IV with one or more monomers of formula V, andoptionally with one or more monomers of formula VI, in an aryl-arylcoupling reaction, wherein preferably R¹⁰ and R¹¹ are selected from H,Cl, Br, I, —B(OZ²)₂ and —Sn(Z⁴)₃.

Preferred methods for polymerisation are those leading to C—C-couplingor C—N-coupling, like Suzuki polymerisation, as described for example inWO 00/53656, Yamamoto polymerisation, as described in for example in T.Yamamoto et al., Progress in Polymer Science, 1993, 17, 1153-1205 or inWO 2004/022626 A1, Stille coupling, as described for example in Z. Baoet al., J. Am. Chem. Soc., 1995, 117, 12426-12435 and C—H activationpolymerisation, as described for example in M. Leclerc et al, Angew.Chem. Int. Ed. 2012, 51, 2068-2071. For example, when synthesizing alinear polymer by Yamamoto polymerisation, preferably monomers asdescribed above are used having two reactive halide groups R¹⁰ and R¹¹.When synthesizing a linear polymer by Suzuki polymerisation, preferablymonomers as described above are used wherein at least one reactive groupR¹⁰ or R¹¹ is a boronic acid or boronic acid derivative group. Whensynthesizing a linear polymer by Stille polymerisation, preferablymonomers as described above are used wherein at least one reactive groupR¹⁰ or R¹¹ is an alkylstannane group. When synthesizing a linear polymerby C—H activation polymerisation, preferably a monomer as describedabove is used wherein at least one reactive group R¹⁰ or R¹¹ is aactivated hydrogen bond.

Suzuki, Stille and C—H activation polymerisation may be used to preparehomopolymers as well as statistical, alternating and block randomcopolymers. Homopolymers of units of formula I can be prepared forexample from a monomer of formula IV and a monomer of formula V, whereinthe reactive groups R¹⁰ and R¹¹ in one of the monomers are halogen, forexample Br, and the reactive groups R¹⁰ and R¹¹ in the other monomer areboronic acid groups, boronic acid derivative groups, C—H activated bondor alkylstannane. The synthesis of statistical, alternating and blockcopolymers is described in detail for example in WO 03/048225 A2 or WO2005/014688 A2.

Suzuki, Stille and C—H activation polymerisation employs a Pd(0) complexor a Pd(II) salt. Preferred Pd(0) complexes are those bearing at leastone phosphine ligand such as Pd(Ph₃P)₄. Another preferred phosphineligand is tris(ortho-tolyl)phosphine, i.e. Pd(o-Tol₃P)₄. PreferredPd(II) salts include palladium acetate, i.e. Pd(OAc)₂ ortrans-di(μ-acetato)-bis[o-(di-o-tolylphosphino)benzyl]dipalladium(II).Alternatively the Pd(0) complex can be prepared by mixing a Pd(0)dibenzylideneacetone complex, for exampletris(dibenzyl-ideneacetone)dipalladium(0),bis(dibenzylideneacetone)palladium(0), or Pd(II) salts e.g. palladiumacetate, with a phosphine ligand, for example triphenylphosphine,tris(ortho-tolyl)phosphine, tris(o-methoxyphenyl)phosphine ortri(tert-butyl)phosphine. Suzuki polymerisation is performed in thepresence of a base, for example sodium carbonate, potassium carbonate,lithium hydroxide, potassium phosphate, cesium carbonate or an organicbase such as tetraethylammonium carbonate or tetraethylammoniumhydroxide. Yamamoto polymerisation employs a Ni(0) complex, for examplebis(1,5-cyclooctadienyl) nickel(0).

As alternatives to halogens as described above, leaving groups offormula —O—SO₂Z¹ can be used wherein Z¹ is as described above.Particular examples of such leaving groups are tosylate, mesylate andtriflate.

Especially suitable and preferred synthesis methods of the polymers ofthe present invention are illustrated in the examples.

The novel methods of preparing monomers and polymers as described aboveand below are another aspect of the invention.

The compounds and polymers according to the present invention can alsobe used in mixtures or polymer blends, for example together withmonomeric compounds or together with other polymers havingcharge-transport, semiconducting, electrically conducting,photoconducting and/or light emitting semiconducting properties, or forexample with polymers having hole blocking or electron blockingproperties for use as interlayers or charge blocking layers in OLEDdevices. Thus, another aspect of the invention relates to a polymerblend comprising one or more polymers according to the present inventionand one or more further polymers having one or more of theabove-mentioned properties. These blends can be prepared by conventionalmethods that are described in prior art and known to the skilled person.Typically the polymers are mixed with each other or dissolved insuitable solvents and the solutions combined.

Another aspect of the invention relates to a formulation comprising oneor more small molecules, polymers, mixtures or polymer blends asdescribed above and below and one or more organic solvents.

Preferred solvents are aliphatic hydrocarbons, chlorinated hydrocarbons,aromatic hydrocarbons, ketones, ethers and mixtures thereof. Additionalsolvents which can be used include 1,2,4-trimethylbenzene,1,2,3,4-tetra-methyl benzene, pentylbenzene, mesitylene, cumene, cymene,cyclohexylbenzene, diethylbenzene, tetralin, decalin, 2,6-lutidine,2-fluoro-m-xylene, 3-fluoro-o-xylene, 2-chlorobenzotrifluoride,N,N-dimethylformamide, 2-chloro-6-fluorotoluene, 2-fluoroanisole,anisole, 2,3-dimethylpyrazine, 4-fluoroanisole, 3-fluoroanisole,3-trifluoro-methylanisole, 2-methylanisole, phenetol, 4-methylanisole,3-methylanisole, 4-fluoro-3-methylanisole, 2-fluorobenzonitrile,4-fluoroveratrol, 2,6-dimethylanisole, 3-fluorobenzo-nitrile,2,5-dimethylanisole, 2,4-dimethylanisole, benzonitrile,3,5-dimethyl-anisole, N,N-dimethylaniline, ethyl benzoate,1-fluoro-3,5-dimethoxy-benzene, 1-methylnaphthalene,N-methylpyrrolidinone, 3-fluorobenzo-trifluoride, benzotrifluoride,dioxane, trifluoromethoxy-benzene, 4-fluorobenzotrifluoride,3-fluoropyridine, toluene, 2-fluoro-toluene, 2-fluorobenzotrifluoride,3-fluorotoluene, 4-isopropylbiphenyl, phenyl ether, pyridine,4-fluorotoluene, 2,5-difluorotoluene, 1-chloro-2,4-difluorobenzene,2-fluoropyridine, 3-chlorofluoro-benzene, 1-chloro-2,5-difluorobenzene,4-chlorofluorobenzene, chloro-benzene, o-dichlorobenzene,2-chlorofluorobenzene, p-xylene, m-xylene, o-xylene or mixture of o-,m-, and p-isomers. Solvents with relatively low polarity are generallypreferred. For inkjet printing solvents and solvent mixtures with highboiling temperatures are preferred. For spin coating alkylated benzeneslike xylene and toluene are preferred.

Examples of especially preferred solvents include, without limitation,dichloromethane, trichloromethane, chlorobenzene, o-dichlorobenzene,tetrahydrofuran, anisole, morpholine, toluene, o-xylene, m-xylene,p-xylene, 1,4-dioxane, acetone, methylethylketone, 1,2-dichloroethane,1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane, ethyl acetate, n-butylacetate, N,N-dimethylformamide, dimethylacetamide, dimethylsulfoxide,tetraline, decaline, indane, methyl benzoate, ethyl benzoate, mesityleneand/or mixtures thereof.

The concentration of the compounds or polymers in the solution ispreferably 0.1 to 10% by weight, more preferably 0.5 to 5% by weight.Optionally, the solution also comprises one or more binders to adjustthe rheological properties, as described for example in WO 2005/055248A1.

After the appropriate mixing and ageing, solutions are evaluated as oneof the following categories: complete solution, borderline solution orinsoluble. The contour line is drawn to outline the solubilityparameter-hydrogen bonding limits dividing solubility and insolubility.‘Complete’ solvents falling within the solubility area can be chosenfrom literature values such as published in “Crowley, J. D., Teague, G.S. Jr and Lowe, J. W. Jr., Journal of Paint Technology, 1966, 38 (496),296”. Solvent blends may also be used and can be identified as describedin “Solvents, W. H. Ellis, Federation of Societies for CoatingsTechnology, p 9-10, 1986”. Such a procedure may lead to a blend of ‘non’solvents that will dissolve both the polymers of the present invention,although it is desirable to have at least one true solvent in a blend.

The compounds and polymers according to the present invention can alsobe used in patterned OSC layers in the devices as described above andbelow. For applications in modern microelectronics it is generallydesirable to generate small structures or patterns to reduce cost (moredevices/unit area), and power consumption. Patterning of thin layerscomprising a polymer according to the present invention can be carriedout for example by photolithography, electron beam lithography or laserpatterning.

For use as thin layers in electronic or electrooptical devices thecompounds, polymers, polymer blends or formulations of the presentinvention may be deposited by any suitable method. Liquid coating ofdevices is more desirable than vacuum deposition techniques. Solutiondeposition methods are especially preferred. The formulations of thepresent invention enable the use of a number of liquid coatingtechniques. Preferred deposition techniques include, without limitation,dip coating, spin coating, ink jet printing, nozzle printing,letter-press printing, screen printing, gravure printing, doctor bladecoating, roller printing, reverse-roller printing, offset lithographyprinting, dry offset lithography printing, flexographic printing, webprinting, spray coating, curtain coating, brush coating, slot dyecoating or pad printing.

Ink jet printing is particularly preferred when high resolution layersand devices needs to be prepared. Selected formulations of the presentinvention may be applied to prefabricated device substrates by ink jetprinting or microdispensing. Preferably industrial piezoelectric printheads such as but not limited to those supplied by Aprion, Hitachi-Koki,InkJet Technology, On Target Technology, Picojet, Spectra, Trident, Xaarmay be used to apply the organic semiconductor layer to a substrate.Additionally semi-industrial heads such as those manufactured byBrother, Epson, Konica, Seiko Instruments Toshiba TEC or single nozzlemicrodispensers such as those produced by Microdrop and Microfab may beused.

In order to be applied by ink jet printing or microdispensing, thecompounds or polymers should be first dissolved in a suitable solvent.Solvents must fulfil the requirements stated above and must not have anydetrimental effect on the chosen print head. Additionally, solventsshould have boiling points >100° C., preferably >140° C. and morepreferably >150° C. in order to prevent operability problems caused bythe solution drying out inside the print head. Apart from the solventsmentioned above, suitable solvents include substituted andnon-substituted xylene derivatives, di-C₁₋₂-alkyl formamide, substitutedand non-substituted anisoles and other phenol-ether derivatives,substituted heterocycles such as substituted pyridines, pyrazines,pyrimidines, pyrrolidinones, substituted and non-substitutedN,N-di-C₁₋₂-alkylanilines and other fluorinated or chlorinatedaromatics.

A preferred solvent for depositing a compound or polymer according tothe present invention by ink jet printing comprises a benzene derivativewhich has a benzene ring substituted by one or more substituents whereinthe total number of carbon atoms among the one or more substituents isat least three. For example, the benzene derivative may be substitutedwith a propyl group or three methyl groups, in either case there beingat least three carbon atoms in total. Such a solvent enables an ink jetfluid to be formed comprising the solvent with the compound or polymer,which reduces or prevents clogging of the jets and separation of thecomponents during spraying. The solvent(s) may include those selectedfrom the following list of examples: dodecylbenzene,1-methyl-4-tert-butylbenzene, terpineol, limonene, isodurene,terpinolene, cymene, diethylbenzene. The solvent may be a solventmixture, that is a combination of two or more solvents, each solventpreferably having a boiling point >100° C., more preferably >140° C.Such solvent(s) also enhance film formation in the layer deposited andreduce defects in the layer.

The ink jet fluid (that is mixture of solvent, binder and semiconductingcompound) preferably has a viscosity at 20° C. of 1-100 mPa·s, morepreferably 1-50 mPa·s and most preferably 1-30 mPa·s.

The polymer blends and formulations according to the present inventioncan additionally comprise one or more further components or additivesselected for example from surface-active compounds, lubricating agents,wetting agents, dispersing agents, hydrophobing agents, adhesive agents,flow improvers, defoaming agents, deaerators, diluents which may bereactive or non-reactive, auxiliaries, colourants, dyes or pigments,sensitizers, stabilizers, nanoparticles or inhibitors.

The compounds and polymers to the present invention are useful as chargetransport, semiconducting, electrically conducting, photoconducting orlight emitting materials in optical, electrooptical, electronic,electroluminescent or photoluminescent components or devices. In thesedevices, the polymers of the present invention are typically applied asthin layers or films.

Thus, the present invention also provides the use of the semiconductingcompound, polymer, polymers blend, formulation or layer in an electronicdevice. The formulation may be used as a high mobility semiconductingmaterial in various devices and apparatus. The formulation may be used,for example, in the form of a semiconducting layer or film. Accordingly,in another aspect, the present invention provides a semiconducting layerfor use in an electronic device, the layer comprising a compound,polymer, polymer blend or formulation according to the invention. Thelayer or film may be less than about 30 microns. For various electronicdevice applications, the thickness may be less than about 1 micronthick. The layer may be deposited, for example on a part of anelectronic device, by any of the aforementioned solution coating orprinting techniques.

The invention additionally provides an electronic device comprising acompound, polymer, polymer blend, formulation or organic semiconductinglayer according to the present invention. Especially preferred devicesare OFETs, TFTs, ICs, logic circuits, capacitors, RFID tags, OLEDs,OLETs, OPEDs, OPVs, OPDs, solar cells, laser diodes, photoconductors,photodetectors, electrophotographic devices, electrophotographicrecording devices, organic memory devices, sensor devices, chargeinjection layers, Schottky diodes, planarising layers, antistatic films,conducting substrates and conducting patterns.

Especially preferred electronic device are OFETs, OLEDs, OPV and OPDdevices, in particular bulk heterojunction (BHJ) OPV devices. In anOFET, for example, the active semiconductor channel between the drainand source may comprise the layer of the invention. As another example,in an OLED device, the charge (hole or electron) injection or transportlayer may comprise the layer of the invention.

For use in OPV or OPD devices the polymer according to the presentinvention is preferably used in a formulation that comprises orcontains, more preferably consists essentially of, very preferablyexclusively of, a p-type (electron donor) semiconductor and an n-type(electron acceptor) semiconductor. The p-type semiconductor isconstituted by a polymer according to the present invention. The n-typesemiconductor can be an inorganic material such as zinc oxide (ZnO_(x)),zinc tin oxide (ZTO), titan oxide (TiO_(x)), molybdenum oxide (MoO_(x)),nickel oxide (NiO_(x)), or cadmium selenide (CdSe), or an organicmaterial such as graphene or a fullerene or substituted fullerene, forexample an indene-C₆₀-fullerene bisaduct like ICBA, as disclosed forexample in WO 2008/018931, or a (6,6)-phenyl-butyric acid methyl esterderivatized methano C₆₀ fullerene, also known as “PCBM-C₆₀” or“C₆₀PCBM”, as disclosed for example in G. Yu, J. Gao, J. C. Hummelen, F.Wudl, A. J. Heeger, Science 1995, Vol. 270, p. 1789 ff and having thestructure shown below, or structural analogous compounds with e.g. a C₆₁fullerene group, a C₇₀ fullerene group, or a C₇₁ fullerene group, or anorganic polymer (see for example Coakley, K. M. and McGehee, M. D. Chem.Mater. 2004, 16, 4533).

Preferably the polymer according to the present invention is blendedwith an n-type semiconductor such as a fullerene or substitutedfullerene, like for example PCBM-C₆₀, PCBM-C₇₀, bis-PCBM-C₆₀,bis-PCBM-C₇₀, ICMA-c₆₀(1′,4′-dihydro-naphtho[2′,3′:1,2][5,6]fullerene-C₆₀), ICBA, oQDM-C₆₀(1,4′-dihydro-naphtho[2′,3′:1,9][5,6]fullerene-C60-Ih), bis-oQDM-C₆₀,graphene, or a metal oxide, like for example, ZnO_(x), TiO_(x), ZTO,MoO_(x), NiO_(x), or quantum dots, like for example, CdSe or CdS, toform the active layer in an OPV or OPD device. The device preferablyfurther comprises a first transparent or semi-transparent electrode on atransparent or semi-transparent substrate on one side of the activelayer, and a second metallic or semi-transparent electrode on the otherside of the active layer.

Further preferably the OPV or OPD device comprises, between the activelayer and the first or second electrode, one or more additional bufferlayers acting as hole transporting layer and/or electron blocking layer,which comprise a material such as metal oxide, like for example, ZTO,MoO_(x), NiO_(x), a conjugated polymer electrolyte, like for examplePEDOT:PSS, a conjugated polymer, like for example polytriarylamine(PTAA), an organic compound, like for exampleN,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′diamine (NPB),N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD), oralternatively as hole blocking layer and/or electron transporting layer,which comprise a material such as metal oxide, like for example,ZnO_(x), TiO_(x), a salt, like for example LiF, NaF, CsF, a conjugatedpolymer electrolyte, like for examplepoly[3-(6-trimethylammoniumhexyl)thiophene],poly(9,9-bis(2-ethylhexyl)-fluorene]-b-poly[3-(6-trimethylammoniumhexyl)thiophene],orpoly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]or an organic compound, like for exampletris(8-quinolinolato)-aluminium(III) (Alq₃),4,7-diphenyl-1,10-phenanthroline.

In a blend or mixture of a polymer according to the present inventionwith a fullerene or modified fullerene, the ratio polymer:fullerene ispreferably from 5:1 to 1:5 by weight, more preferably from 1:1 to 1:3 byweight, most preferably 1:1 to 1:2 by weight. A polymeric binder mayalso be included, from 5 to 95% by weight. Examples of binder includepolystyrene (PS), polypropylene (PP) and polymethylmethacrylate (PMMA).

To produce thin layers in BHJ OPV devices the compounds, polymers,polymer blends or formulations of the present invention may be depositedby any suitable method. Liquid coating of devices is more desirable thanvacuum deposition techniques. Solution deposition methods are especiallypreferred. The formulations of the present invention enable the use of anumber of liquid coating techniques. Preferred deposition techniquesinclude, without limitation, dip coating, spin coating, ink jetprinting, nozzle printing, letter-press printing, screen printing,gravure printing, doctor blade coating, roller printing, reverse-rollerprinting, offset lithography printing, dry offset lithography printing,flexographic printing, web printing, spray coating, curtain coating,brush coating, slot dye coating or pad printing. For the fabrication ofOPV devices and modules area printing method compatible with flexiblesubstrates are preferred, for example slot dye coating, spray coatingand the like.

Suitable solutions or formulations containing the blend or mixture of apolymer according to the present invention with a C₆₀ or C₇₀ fullereneor modified fullerene like PCBM must be prepared. In the preparation offormulations, suitable solvent must be selected to ensure fulldissolution of both component, p-type and n-type and take into accountthe boundary conditions (for example rheological properties) introducedby the chosen printing method.

Organic solvent are generally used for this purpose. Typical solventscan be aromatic solvents, halogenated solvents or chlorinated solvents,including chlorinated aromatic solvents. Examples include, but are notlimited to chlorobenzene, 1,2-dichlorobenzene, chloroform,1,2-dichloroethane, dichloromethane, carbon tetrachloride, toluene,cyclohexanone, ethylacetate, tetrahydrofuran, anisole, morpholine,o-xylene, m-xylene, p-xylene, 1,4-dioxane, acetone, methylethylketone,1,2-dichloroethane, 1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane,ethyl acetate, n-butyl acetate, dimethylformamide, dimethylacetamide,dimethylsulfoxide, tetraline, decaline, indane, methyl benzoate, ethylbenzoate, mesitylene and combinations thereof.

The OPV device can for example be of any type known from the literature(see e.g. Waldauf et al., Appl. Phys. Lett., 2006, 89, 233517).

A first preferred OPV device according to the invention comprises thefollowing layers (in the sequence from bottom to top):

-   -   optionally a substrate,    -   a high work function electrode, preferably comprising a metal        oxide, like for example ITO, serving as anode,    -   an optional conducting polymer layer or hole transport layer,        preferably comprising an organic polymer or polymer blend, for        example of PEDOT:PSS (poly(3,4-ethylenedioxythiophene):        poly(styrene-sulfonate), or TBD        (N,N′-dyphenyl-N—N′-bis(3-methylphenyl)-1,1′biphenyl-4,4′-diamine)        or NBD        (N,N′-dyphenyl-N—N′-bis(1-napthylphenyl)-1,1′biphenyl-4,4′-diamine),    -   a layer, also referred to as “active layer”, comprising a p-type        and an n-type organic semiconductor, which can exist for example        as a p-type/n-type bilayer or as distinct p-type and n-type        layers, or as blend or p-type and n-type semiconductor, forming        a BHJ,    -   optionally a layer having electron transport properties, for        example comprising LiF,    -   a low work function electrode, preferably comprising a metal        like for example aluminum, serving as cathode,    -   wherein at least one of the electrodes, preferably the anode, is        transparent to visible light, and    -   wherein the p-type semiconductor is a polymer according to the        present invention.

A second preferred OPV device according to the invention is an invertedOPV device and comprises the following layers (in the sequence frombottom to top):

-   -   optionally a substrate,    -   a high work function metal or metal oxide electrode, comprising        for example ITO, serving as cathode,    -   a layer having hole blocking properties, preferably comprising a        metal oxide like TiO_(x) or Zn_(x),    -   an active layer comprising a p-type and an n-type organic        semiconductor, situated between the electrodes, which can exist        for example as a p-type/n-type bilayer or as distinct p-type and        n-type layers, or as blend or p-type and n-type semiconductor,        forming a BHJ,    -   an optional conducting polymer layer or hole transport layer,        preferably comprising an organic polymer or polymer blend, for        example of PEDOT:PSS or TBD or NBD,    -   an electrode comprising a high work function metal like for        example silver, serving as anode,    -   wherein at least one of the electrodes, preferably the cathode,        is transparent to visible light, and    -   wherein the p-type semiconductor is a polymer according to the        present invention.

In the OPV devices of the present invention the p-type and n-typesemiconductor materials are preferably selected from the materials, likethe polymer/fullerene systems, as described above

When the active layer is deposited on the substrate, it forms a BHJ thatphase separates at nanoscale level. For discussion on nanoscale phaseseparation see Dennler et al, Proceedings of the IEEE, 2005, 93 (8),1429 or Hoppe et al, Adv. Func. Mater, 2004, 14(10), 1005. An optionalannealing step may be then necessary to optimize blend morphology andconsequently OPV device performance.

Another method to optimize device performance is to prepare formulationsfor the fabrication of OPV(BHJ) devices that may include high boilingpoint additives to promote phase separation in the right way.1,8-Octanedithiol, 1,8-diiodooctane, nitrobenzene, chloronaphthalene,and other additives have been used to obtain high-efficiency solarcells. Examples are disclosed in J. Peet, et al, Nat. Mater., 2007, 6,497 or Fréchet et al. J. Am. Chem. Soc., 2010, 132, 7595-7597.

The compounds, polymers, formulations and layers of the presentinvention are also suitable for use in an OFET as the semiconductingchannel. Accordingly, the invention also provides an OFET comprising agate electrode, an insulating (or gate insulator) layer, a sourceelectrode, a drain electrode and an organic semiconducting channelconnecting the source and drain electrodes, wherein the organicsemiconducting channel comprises a compound, polymer, polymer blend,formulation or organic semiconducting layer according to the presentinvention. Other features of the OFET are well known to those skilled inthe art.

OFETs where an OSC material is arranged as a thin film between a gatedielectric and a drain and a source electrode, are generally known, andare described for example in U.S. Pat. No. 5,892,244, U.S. Pat. No.5,998,804, U.S. Pat. No. 6,723,394 and in the references cited in thebackground section. Due to the advantages, like low cost productionusing the solubility properties of the compounds according to theinvention and thus the processability of large surfaces, preferredapplications of these FETs are such as integrated circuitry, TFTdisplays and security applications.

The gate, source and drain electrodes and the insulating andsemiconducting layer in the OFET device may be arranged in any sequence,provided that the source and drain electrode are separated from the gateelectrode by the insulating layer, the gate electrode and thesemiconductor layer both contact the insulating layer, and the sourceelectrode and the drain electrode both contact the semiconducting layer.

An OFET device according to the present invention preferably comprises:

-   -   a source electrode,    -   a drain electrode,    -   a gate electrode,    -   a semiconducting layer,    -   one or more gate insulator layers,    -   optionally a substrate.        wherein the semiconductor layer preferably comprises a compound,        polymer, polymer blend or formulation as described above and        below.

The OFET device can be a top gate device or a bottom gate device.Suitable structures and manufacturing methods of an OFET device areknown to the skilled in the art and are described in the literature, forexample in US 2007/0102696 A1.

The gate insulator layer preferably comprises a fluoropolymer, like e.g.the commercially available Cytop 809M® or Cytop 107M® (from AsahiGlass). Preferably the gate insulator layer is deposited, e.g. byspin-coating, doctor blading, wire bar coating, spray or dip coating orother known methods, from a formulation comprising an insulator materialand one or more solvents with one or more fluoro atoms (fluorosolvents),preferably a perfluorosolvent. A suitable perfluorosolvent is e.g. FC75®(available from Acros, catalogue number 12380). Other suitablefluoropolymers and fluorosolvents are known in prior art, like forexample the perfluoropolymers Teflon AF® 1600 or 2400 (from DuPont) orFluoropel® (from Cytonix) or the perfluorosolvent FC 43® (Acros, No.12377). Especially preferred are organic dielectric materials having alow permittivity (or dielectric contant) from 1.0 to 5.0, verypreferably from 1.8 to 4.0 (“low k materials”), as disclosed for examplein US 2007/0102696 A1 or U.S. Pat. No. 7,095,044.

In security applications, OFETs and other devices with semiconductingmaterials according to the present invention, like transistors ordiodes, can be used for RFID tags or security markings to authenticateand prevent counterfeiting of documents of value like banknotes, creditcards or ID cards, national ID documents, licenses or any product withmonetary value, like stamps, tickets, shares, cheques etc.

Alternatively, the materials according to the invention can be used inOLEDs, e.g. as the active display material in a flat panel displayapplications, or as backlight of a flat panel display like e.g. a liquidcrystal display. Common OLEDs are realized using multilayer structures.An emission layer is generally sandwiched between one or moreelectron-transport and/or hole-transport layers. By applying an electricvoltage electrons and holes as charge carriers move towards the emissionlayer where their recombination leads to the excitation and henceluminescence of the lumophor units contained in the emission layer. Theinventive compounds, materials and films may be employed in one or moreof the charge transport layers and/or in the emission layer,corresponding to their electrical and/or optical properties. Furthermoretheir use within the emission layer is especially advantageous, if thecompounds, materials and films according to the invention showelectroluminescent properties themselves or comprise electroluminescentgroups or compounds. The selection, characterization as well as theprocessing of suitable monomeric, oligomeric and polymeric compounds ormaterials for the use in OLEDs is generally known by a person skilled inthe art, see, e.g., Müller et al, Synth. Metals, 2000, 111-112, 31-34,Alcala, J. Appl. Phys., 2000, 88, 7124-7128 and the literature citedtherein.

According to another use, the materials according to this invention,especially those showing photoluminescent properties, may be employed asmaterials of light sources, e.g. in display devices, as described in EP0 889 350 A1 or by C. Weder et al., Science, 1998, 279, 835-837.

A further aspect of the invention relates to both the oxidised andreduced form of the compounds according to this invention. Either lossor gain of electrons results in formation of a highly delocalised ionicform, which is of high conductivity. This can occur on exposure tocommon dopants. Suitable dopants and methods of doping are known tothose skilled in the art, e.g. from EP 0 528 662, U.S. Pat. No.5,198,153 or WO 96/21659.

The doping process typically implies treatment of the semiconductormaterial with an oxidating or reducing agent in a redox reaction to formdelocalised ionic centres in the material, with the correspondingcounterions derived from the applied dopants. Suitable doping methodscomprise for example exposure to a doping vapor in the atmosphericpressure or at a reduced pressure, electrochemical doping in a solutioncontaining a dopant, bringing a dopant into contact with thesemiconductor material to be thermally diffused, and ion-implantation ofthe dopant into the semiconductor material.

When electrons are used as carriers, suitable dopants are for examplehalogens (e.g., I₂, Cl₂, Br₂, ICl, ICl₃, IBr and IF), Lewis acids (e.g.,PF₅, AsF₅, SbF₅, BF₃, BCl₃, SbCl₅, BBr₃ and SO₃), protonic acids,organic acids, or amino acids (e.g., HF, HCl, HNO₃, H₂SO₄, HClO₄, FSO₃Hand ClSO₃H), transition metal compounds (e.g., FeCl₃, FeOCl, Fe(ClO₄)₃,Fe(4-CH₃C₆H₄SO₃)₃, TiCl₄, ZrCl₄, HfCl₄, NbF₅, NbCl₅, TaCl₅, MoF₅, MoCl₅,WF₅, WCl₆, UF₆ and LnCl₃ (wherein Ln is a lanthanoid), anions (e.g.,Cl⁻, Br⁻, I⁻, HSO₄ ⁻, SO₄ ²⁻, NO₃ ⁻, ClO₄ ⁻, BF₄ ⁻, PF₆ ⁻, AsF₆ ⁻, SbF₆⁻, FeCl₄ ⁻, Fe(CN)₆ ³⁻, and anions of various sulfonic acids, such asaryl-SO₃ ⁻). When holes are used as carriers, examples of dopants arecations (e.g., H⁺, Li⁺, Na⁺, K⁺, Rb⁺ and Cs⁺), alkali metals (e.g., Li,Na, K, Rb, and Cs), alkaline-earth metals (e.g., Ca, Sr, and Ba), O₂,XeOF₄, (NO₂ ⁺) (SbF₆ ⁻), (NO₂ ⁺) (SbCl₆ ⁻), (NO₂ ⁺) (BF₄ ⁻), AgClO₄,H₂IrCl₆, La(NO₃)₃.6H₂O, FSO₂OOSO₂F, Eu, acetylcholine, R₄N⁺, (R is analkyl group), R₄P⁺ (R is an alkyl group), R₆As⁺ (R is an alkyl group),and R₃S⁺ (R is an alkyl group).

The conducting form of the compounds of the present invention can beused as an organic “metal” in applications including, but not limitedto, charge injection layers and ITO planarising layers in OLEDapplications, films for flat panel displays and touch screens,antistatic films, printed conductive substrates, patterns or tracts inelectronic applications such as printed circuit boards and condensers.

The compounds and formulations according to the present invention mayalso be suitable for use in organic plasmon-emitting diodes (OPEDs), asdescribed for example in Koller et al., Nat. Photonics, 2008, 2, 684.

According to another use, the materials according to the presentinvention can be used alone or together with other materials in or asalignment layers in LCD or OLED devices, as described for example in US2003/0021913. The use of charge transport compounds according to thepresent invention can increase the electrical conductivity of thealignment layer. When used in an LCD, this increased electricalconductivity can reduce adverse residual dc effects in the switchableLCD cell and suppress image sticking or, for example in ferroelectricLCDs, reduce the residual charge produced by the switching of thespontaneous polarisation charge of the ferroelectric LCs. When used inan OLED device comprising a light emitting material provided onto thealignment layer, this increased electrical conductivity can enhance theelectroluminescence of the light emitting material. The compounds ormaterials according to the present invention having mesogenic or liquidcrystalline properties can form oriented anisotropic films as describedabove, which are especially useful as alignment layers to induce orenhance alignment in a liquid crystal medium provided onto saidanisotropic film. The materials according to the present invention mayalso be combined with photoisomerisable compounds and/or chromophoresfor use in or as photoalignment layers, as described in US 2003/0021913A1.

According to another use the materials according to the presentinvention, especially their water-soluble derivatives (for example withpolar or ionic side groups) or ionically doped forms, can be employed aschemical sensors or materials for detecting and discriminating DNAsequences. Such uses are described for example in L. Chen, D. W.McBranch, H. Wang, R. Helgeson, F. Wudl and D. G. Whitten, Proc. Natl.Acad. Sci. U.S.A., 1999, 96, 12287; D. Wang, X. Gong, P. S. Heeger, F.Rininsland, G. C. Bazan and A. J. Heeger, Proc. Natl. Acad. Sci. U.S.A.,2002, 99, 49; N. DiCesare, M. R. Pinot, K. S. Schanze and J. R.Lakowicz, Langmuir, 2002, 18, 7785; D. T. McQuade, A. E. Pullen, T. M.Swager, Chem. Rev., 2000, 100, 2537.

Unless the context clearly indicates otherwise, as used herein pluralforms of the terms herein are to be construed as including the singularform and vice versa.

Throughout the description and claims of this specification, the words“comprise” and “contain” and variations of the words, for example“comprising” and “comprises”, mean “including but not limited to”, andare not intended to (and do not) exclude other components.

It will be appreciated that variations to the foregoing embodiments ofthe invention can be made while still falling within the scope of theinvention. Each feature disclosed in this specification, unless statedotherwise, may be replaced by alternative features serving the same,equivalent or similar purpose. Thus, unless stated otherwise, eachfeature disclosed is one example only of a generic series of equivalentor similar features.

All of the features disclosed in this specification may be combined inany combination, except combinations where at least some of suchfeatures and/or steps are mutually exclusive. In particular, thepreferred features of the invention are applicable to all aspects of theinvention and may be used in any combination. Likewise, featuresdescribed in non-essential combinations may be used separately (not incombination).

Above and below, unless stated otherwise percentages are percent byweight and temperatures are given in degrees Celsius. The values of thedielectric constant c (“permittivity”) refer to values taken at 20° C.and 1,000 Hz.

The invention will now be described in more detail by reference to thefollowing examples, which are illustrative only and do not limit thescope of the invention.

Example 1

Polymer (1) is prepared as follows (wherein “EH” is 2-ethylhexyl).

The synthesis of monomer (1.1) is described in WO 2012/030942 A1. Thesynthesis of monomer (1.2) is described in Q. Hou et al., Macromolecules2004, 37, 6299-6305.

In a two-necked flask a mixture of the distannyl monomer (1.1) (1.49 g,92.0% pure, 1.08 eq., 1.03 mmol),4,7-bis-(5-bromo-4-hexyl-thiophen-2-yl)-benzo[1,2,5]thiadiazole (1.2)(595 mg, 1.00 eq., 0.950 mmol), bis(dibenzylideneacetone)palladium(0)(30 mg, 0.055 eq., 0.052 mmol) and tri-o-tolylphosphine (70 mg, 0.24eq., 0.23 mmol) are placed and treated with evacuation-argon cycle threetimes. To this mixture anhydrous toluene (200 cm³) is added via asyringe and the reaction flask was again treated with evacuation-argoncycle three times. The reaction mixture is then heated to 110° C. for 72hours. After cooling to 60° C., an aqueous solution of sodiumdiethylthiocarbamate trihydrate (15 mg in 200 cm³ of water) was added tothe reaction mixture and the mixture was stirred at 90° C. for 18 hours.The resulting solution was washed with water three times and the organiclayer was poured into methanol (500 cm³) for precipitation. Theprecipitated solid is subjected to sequential Soxhlet extractions withacetone, hexane, dichloromethane, chloroform, chlorobenzene and1,2-dichlorobenzene. The chlorobenzene and 1,2-dichlorobenzene fractionsare poured into methanol, filtered and dried in vacuo to give a blacksolid. Chlorobenzene fraction, 126 mg, Yield: 9.2%. GPC (140° C.,1,2,4-trichlorobenzene): M_(n)=23.3 kg·mol⁻¹; M_(w)=35.7 kg·mol⁻¹;PDI=1.53. 1,2-Dichlorobenzene fraction, 930 mg, Yield: 68%. GPC (140°C., 1,2,4-trichlorobenzene): M_(n)=47.2 kg·mol⁻¹; M_(w)=75.7 kg·mol⁻¹;PDI 1.61.

Example 2

The following polymers is prepared in analogy to the process describedin Example 1 (wherein “EH” is 2-ethylhexyl):

The synthesis of monomer (2.1) analogue is described in WO 2011/060526A1.

The distannyl monomer (1.1) (148 mg, 1.24 eq, 1.25 mmol),4,7-bis-(5-bromo-4-hexyl-thiophen-2-yl)-5,6-difluoro-benzo[1,2,5]thiadiazole(2.1) (60.0 mg, 1.00 eq., 0.0906 mmol),bis(dibenzylideneacetone)palladium(0) (3.0 mg, 0.11 eq, 0.0099 mmol) andtri-o-tolylphosphine (6.0 mg, 0.12 eq, 0.010 mmol) give a black solid asthe chlorobenzene soluble fraction (47 mg, Yield: 35%). GPC (140° C.,1,2,4-trichlorobenzene): M_(n)=19.6 kg·mol⁻¹; M_(w)=25.4 kg·mol⁻¹, PDI1.30.

Example 3

The following polymers is prepared in analogy to the process describedin Example 1 (wherein “EH” is 2-ethylhexyl):

The synthesis of monomer (3.1) is described in US 2004/0229925 A1.

The distannyl monomer (1.1) (305 mg, 2.11 eq, 0.233 mmol),4,7-bis-(5-bromo-4-hexyl-thiophen-2-yl)-benzo[1,2,5]thiadiazole (1.2)(69.3 mg, 1.00 eq., 0.111 mmol),4,7-bis-(5-bromo-thiophen-2-yl)benzo[1,2,5]thiadiazole (3.1) (50.8 mg,1.00 eq., 0.111 mmol), tris(dibenzylideneacetone)dipalladium(0) (5.3 mg,0.053 eq, 0.0058 mmol) and tri-o-tolylphosphine (14.2 mg, 0.421 eq,0.0467 mmol) give a black solid as the 1,2-dichlorobenzene solublefraction.

Example 4

The following polymers is prepared in analogy to the process describedin Example 1 (wherein “EH” is 2-ethylhexyl):

The synthesis of monomer (4.1) is described in Ming Wang, et al.,Journal of the American Chemical Society 2011, 133, 9638-9641.

The distannyl monomer (1.1) (98.7 mg, 1.05 eq., 75.4 μmol),5,10-Bis-(5-bromo-4-hexyl-thiophen-2-yl)-2,7-dithia-1,3,6,8-tetraaza-dicyclopenta[a,f]naphthalene(4.1) (71.6 mg, 1.00 eq., 71.5 μmol),tris(dibenzylideneacetone)dipalladium(0) (1.7 mg, 0.026 eq., 1.9 μmol)and tri-o-tolylphosphine (4.6 mg, 0.21 eq., 15 μmol) give a black solidas the 1,2-dichlorobenzene soluble fraction.

Example 5 Fabrication of Photovoltaic Cells Using Photoactive Polymers 1and 4

Photoactive Polymers 1 and 4 were used to fabricate inverted organicphotovoltaic cells containing a glass substrate with a transparentpre-patterned indium tin oxide (ITO) bottom electrode, a hole blockinglayer on top of the ITO electrode, a photoactive layer on top of thehole blocking layer, a hole carrier on top of the photoactive layer, anda top silver electrode. The hole blocking layer contained a crosslinkedpolyamine and the hole carrier layer contained a thiophene polymer inthe HIL family available from Air Products and Chemicals, Inc. Thephotoactive layer was formed from a blend of a photoactive polymer andPCBM (1:2 by weight) dissolved in 1,2-dichlorobenzene at a concentrationof 0.6% by weight by using a blade-coating technique. The photoactivepolymer solution was stirred at 80° C. for at least 12 hours beforecoating. During the blade-coating process, the solution was kept understirring at 80° C. while the blade-coater was maintained at 50° C. Thethickness of the photoactive layer was adjusted by the blade speed andthe volume of the solution deposited.

The current density-voltage characteristics of the devices were measuredas described in Waldauf et al. Appl. Phys. Lett., 89, 233517 (2006). Theresults are summarized in Table 1 below.

TABLE 1 Short-Circuit Photovoltaic Conversion Fill Factor Open-CircuitCurrent Cell Efficiency (%) (%) Voltage (V) (mA/cm²) Cell having 4.42 520.68 12.5 polymer 1 Cell having 3.79 45 0.69 12.2 polymer 4

The invention claimed is:
 1. A polymer comprising: at least one unit offormula I

 wherein A is an optionally substituted, benzofused heteroaryl moietycomprising 1-6 heteroatoms selected from the group consisting of N, O,S, P, Si, Se, As, Te, and Ge, wherein the benzofused heteroaryl moietyis selected from the group consisting of formula B1a, formula B1b,formula B1c, formula B2a, formula B2b, and formula B3a,

 R¹ and R² are the same or different, and are independently selectedfrom H or halogen, R³, R⁴, R⁵, R⁶, R⁷ are the same or different, and areindependently selected from H, halogen, C₁-C₃₀ straight-chain, branchedor cyclic alkyl moieties, in which one or more non-adjacent CH₂ groupsare optionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and one or more Hatoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties, Y¹ and Y² are thesame or different, and are independently selected from H, F, Cl or CN,R⁰ and R⁰⁰ are the same or different, and are independently selectedfrom H or optionally substituted C₁-C₄₀ carbyl or hydrocarbyl moieties.2. The polymer according to claim 1, wherein A is a moiety selected fromthe group consisting of formula B1a, formula B2b and formula B3a.
 3. Thepolymer according to claim 1, wherein the at least one unit of formula Iis selected from the group consisting of formula Ia, formula Ib, formulaIc, formula Id, formula Ie, formula If, formula Ig, formula Ih, formulaIi, formula Ij, formula Ik, formula Il, formula Im, formula In, formulaIo, formula Ip, formula Iq, and formula Ir,

wherein R³, R⁵ and R⁶ are the same or different, and are independentlyselected from H, halogen, C₁-C₃₀ straight-chain, branched or cyclicalkyl moieties, in which one or more non-adjacent CH₂ groups areoptionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and one or more Hatoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties.
 4. The polymeraccording to claim 1 of formula II

wherein A is at least one unit selected from the group consisting offormula I, formula Ia, formula Ib, formula Ic, formula Id, formula Ie,formula If, formula Ig, formula Ih, formula Ii, formula Ij, formula Ik,formula Il, formula Im, formula In, formula Io, formula Ip, formula Iq,and formula Ir, B is at least one unit that is different from A and isselected from the group consisting of formula I, formula Ia, formula Ib,formula Ic, formula Id, formula Ie, formula If, formula Ig, formula Ih,formula Ii, formula Ij, formula Ik, formula Il, formula Im, formula In,formula Io, formula Ip, formula Iq, and formula Ir, wherein R³, R⁵ andR⁶ are the same or different, and are independently selected from H,halogen, C₁-C₃₀ straight-chain, branched or cyclic alkyl moieties, inwhich one or more non-adjacent CH₂ groups are optionally replaced by—O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—, —NR⁰—, —SiR⁰R⁰⁰—, —CF₂—,—CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that O and/or S atoms are not linkeddirectly to one another, and one or more H atoms are optionally replacedby F, Cl, Br, I or CN, or aryl, heteroaryl, aryloxy or heteroaryloxywith 4 to 20 ring atoms that are optionally substituted by halogen orsubstituted or unsubstituted C₁-C₃₀ straight-chain, branched or cyclicalkyl moieties; x is >0 and ≦1, Y is ≧0 and <1, x+y is 1, and n is aninteger >1.
 5. The polymer according to claim 4 selected from the groupconsisting of formula IIa, formula IIb, formula IIc, formula IId,formula IIe, formula IIf, formula IIg, formula IIh, formula IIi, formulaIlk, formula IIm, formula IIn, formula IIo, formula IIp, formula IIq,and formula IIr,

wherein R³, R⁵ and R⁶ are the same or different, and are independentlyselected from H, halogen, C₁-C₃₀ straight-chain, branched or cyclicalkyl moieties, in which one or more non-adjacent CH₂ groups areoptionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and one or more Hatoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties, n is an integer >1,0<x<1 and 0<y<1.
 6. A polymer of formula IIIR⁸-chain-R⁹  III wherein “chain” is the polymer of claim 4, R⁸ and R⁹are the same or different, and are selected independently from the groupconsisting of H, halogen, C₁-C₃₀ straight-chain, branched or cyclicalkyl moieties, in which one or more non-adjacent CH₂ groups areoptionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and one or more Hatoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties, or are selectedindependently from the group consisting of H, F, Br, Cl, I, —CH₂Cl,—CHO, —CR^(a)═CR^(b) ₂, —SiR^(a)R^(b)R^(c), —SiR^(a)X^(a)X^(b),—SiR^(a)R^(b)X^(a), —SnR^(a)R^(b)R^(c), —BR^(a)R^(b),—B(OR^(a))(OR^(b)), —B(OH)₂, —O—SO₂—R^(a), —C≡CH, —C≡—SiR^(a) ₃,—ZnX^(a) or an endcap group, X^(a) and X^(b) are halogen, R^(a), R^(b)and R^(c) are the same or different, and are selected independently fromthe group consisting of H or optionally substituted C₁-C₄₀ carbyl orhydrocarbyl moieties, and wherein two of R^(a), R^(b) and R^(c) may alsoform a ring together with the hetero atom to which they are attached. 7.A mixture or polymer blend comprising: at least one polymer according toclaim 1, and at least one compound or polymer having semiconducting,charge transport, hole/electron transport, hole/electron blocking,electrically conducting, photoconducting or light-emitting properties.8. The mixture or polymer blend of claim 7, further comprising at leastone n-type organic semiconductor compounds.
 9. The mixture or polymerblend according to claim 8, wherein the n-type organic semiconductorcompound is a fullerene or substituted fullerene.
 10. A formulationcomprising at least one polymer according to claim 1, and one or moresolvent.
 11. A device comprising the polymer according to claim 1wherein the device has charge transport, semiconducting, electricallyconducting, photoconducting or light emitting properties wherein thedevice is an optical, electrooptical, electronic, electroluminescent orphotoluminescent device.
 12. A material comprising the polymer of claim1 having charge transport, semiconducting, electrically conducting,photoconducting or light emitting properties.
 13. An optical,electrooptical, electronic, electroluminescent or photoluminescentdevice which comprises a charge transport, semiconducting, electricallyconducting, photoconducting or light emitting material comprising thepolymer according to claim
 1. 14. The device according to claim 13,wherein the device is an organic field effect transistor (OFET), a thinfilm transistor (TFT), an organic light emitting diode (OLED), anorganic light emitting transistor (OLET), an organic photovoltaic device(OPV), an organic photodetector (OPD), an organic solar cell, a laserdiode, a Schottky diode, and photoconductors.
 15. The device accordingto claim 14, wherein the device is an organic field effect transistor(OFET), a bulk heterojunction (BHJ) organic photovoltaic (OPV) device oran inverted bulk heterojunction organic photovoltaic (BHJ OPV) device.16. A process of preparing the polymer of claim 1 in an aryl-arylcoupling reaction with at least two monomers of formula V

wherein A is an optionally substituted, benzofused heteroaryl moietycomprising 1-6 heteroatoms selected from the group consisting of formulaB1a, formula B1b, formula B1c, formula B2a, formula B2b, and formulaB3a,

 R³, R⁴, R⁶, R⁷ are the same or different, and are independentlyselected from H, halogen, C₁-C₃₀ straight-chain, branched or cyclicalkyl moieties, in which one or more non-adjacent CH₂ groups areoptionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and one or more Hatoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties, and R¹⁰ and R¹¹ areselected independently of each other from the group consisting of H, Cl,Br, I, O-tosylate, O-triflate, O-mesylate, O-nonaflate, —SiMe₂F,—SiMeF₂, —O—SO₂Z¹, —B(OZ²)₂, —CZ³═C(Z³)₂, —C≡CH, —C≡CSi(Z¹)₃, —ZnX⁰ and—Sn(Z⁴)₃, wherein X⁰ is halogen, preferably Cl, Br or I, Z¹, Z², Z³, Z⁴are selected from the group consisting of substituted or unsubstitutedalkyl and aryl, and two groups Z² may also together form a cyclic group.17. The polymer of claim 1 wherein R¹ and R² are the same or different,and are independently selected from H or F.
 18. The polymer of claim 1wherein R³, R⁴, R⁵, and R⁶ are the same or different, and areindependently selected from halogen, C₁-C₃₀ straight-chain, branched orcyclic alkyl moieties in which one or more non-adjacent CH₂ groups areoptionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR00-, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and in which oneor more H atoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties.
 19. The polymer ofclaim 1 wherein R⁰ and R⁰⁰ are the same or different, and areindependently selected from H or optionally substituted C₁-C₁₂ carbyl orhydrocarbyl moieties.
 20. The polymer according to claim 1 of formula II

wherein A is a unit selected from the group consisting of formula I,formula Ia, formula Ib, formula Ic, formula Id, formula Ie, formula If,formula Ig, formula Ih, formula Ii, formula Ij, formula Ik, formula Il,formula Im, formula In, formula Io, formula Ip, formula Iq, and formulaIr, B is a unit that is different from A and is selected from aryl andheteroaryl groups that are optionally substituted, wherein R³, R⁵ and R⁶are the same or different, and are independently selected from H,halogen, C₁-C₃₀ straight-chain, branched or cyclic alkyl moieties, inwhich one or more non-adjacent CH₂ groups are optionally replaced by—O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—, —NR⁰—, —SiR⁰R⁰⁰—, —CF₂—,—CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that O and/or S atoms are not linkeddirectly to one another, and one or more H atoms are optionally replacedby F, Cl, Br, I or CN, or aryl, heteroaryl, aryloxy or heteroaryloxywith 4 to 20 ring atoms that are optionally substituted by halogen orsubstituted or unsubstituted C₁-C₃₀ straight-chain, branched or cyclicalkyl moieties; x is >0 and ≦1, Y is ≧0 and <1, x+y is 1, and n is aninteger >1.
 21. The polymer of formula IIIR⁸-chain-R⁹  III wherein “chain” is the polymer of claim 5, wherein R⁸and R⁹ are the same or different, and are selected independently fromthe group consisting of H, halogen, C₁-C₃₀ straight-chain, branched orcyclic alkyl moieties, in which one or more non-adjacent CH₂ groups areoptionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and one or more Hatoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties, or are selectedindependently from the group consisting of H, F, Br, Cl, I, —CH₂Cl,—CHO, —CR^(a)═CR^(b) ₂, —SiR^(a)R^(b)R^(c), —SiR^(a)X^(a)X^(b),—SiR^(a)R^(b)X^(a), —SnR^(a)R^(b)R^(c), —BR^(a)R^(b),—B(OR^(a))(OR^(b)), —B(OH)₂, —O—SO₂—R^(a), —C≡CH, —C≡C—SiR^(a) ₃,—ZnX^(a) or an endcap group, X^(a) and X^(b) are halogen, R^(a), R^(b)and R^(c) are the same or different, and are selected independently fromthe group consisting of H or optionally substituted C₁-C₄₀ carbyl orhydrocarbyl moieties, and wherein two of R^(a), R^(b) and R^(c) may alsoform a ring together with the hetero atom to which they are attached.22. The polymer of formula IIIR⁸-chain-R⁹  III wherein “chain” is the polymer of claim 20, wherein R⁸and R⁹ are the same or different, and are selected independently fromthe group consisting of H, halogen, C₁-C₃₀ straight-chain, branched orcyclic alkyl moieties, in which one or more non-adjacent CH₂ groups areoptionally replaced by —O—, —S—, —C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—,—NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR⁰═CR⁰⁰—, —CY¹═CY²— or —C≡C— so that Oand/or S atoms are not linked directly to one another, and one or more Hatoms are optionally replaced by F, Cl, Br, I or CN, or aryl,heteroaryl, aryloxy or heteroaryloxy with 4 to 20 ring atoms that areoptionally substituted by halogen or substituted or unsubstituted C₁-C₃₀straight-chain, branched or cyclic alkyl moieties, or are selectedindependently from the group consisting of H, F, Br, Cl, I, —CH₂Cl,—CHO, —CR^(a)═CR^(b) ₂, —SiR^(a)R^(b)R^(c), —SiR^(a)X^(a)X^(b),—SiR^(a)R^(b)X^(a), —SnR^(a)R^(b)R^(c), —BR^(a)R^(b),—B(OR^(a))(OR^(b)), —B(OH)₂, —O—SO₂—R^(a), —C≡CH, —C≡C—SiR^(a) ₃,—ZnX^(a) or an endcap group, r and X^(b) are halogen, R^(a), R^(b) andR^(c) are the same or different, and are selected independently from thegroup consisting of H or optionally substituted C₁-C₄₀ carbyl orhydrocarbyl moieties, and wherein two of R^(a), R^(b) and R^(c) may alsoform a ring together with the hetero atom to which they are attached.23. The polymer of claim 5 wherein 0.05<x<0.95 and 0.05<y<0.95.
 24. Theformulation of claim 10 wherein the solvent is an organic solvent. 25.The process of claim 16 wherein R¹⁰ and R¹¹ are the same or different,and are independently selected from the group consisting of H, Cl, Br,I, —B(OZ²)₂ and —Sn(Z⁴)₃.